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產(chǎn)品線卡
Nexperia總部位于荷蘭，是一家在歐洲擁有豐富悠久發(fā)展歷史的全球性半導體公司，目前在歐洲、亞洲和美國共有14,000多名員工。作為基礎(chǔ)半導體器件開發(fā)和生產(chǎn)的領(lǐng)跑者，Nexperia的器件被廣泛應用于汽車、工業(yè)、移動和消費等多個應用領(lǐng)域，幾乎為世界上所有電子設(shè)計的基本功能提供支持。 Nexperia為全球客戶提供服務(wù)，每年的產(chǎn)品出貨量超過1,000億件。這些產(chǎn)品在效率（如工藝、尺寸、功率及性能）方面成為行業(yè)基準，獲得廣泛認可。Nexperia擁有豐富的IP產(chǎn)品組合和持續(xù)擴充的產(chǎn)品范圍，并獲得了IATF 16949、ISO 9001、ISO 14001和ISO 45001標準認證，充分體現(xiàn)了公司對于創(chuàng)新、高效和滿足行業(yè)嚴苛要求的堅定承諾。
產(chǎn)品
NGW50T65M3DFP
650 V, 50 A trench field-stop IGBT with full rated silicon diode

The NGW50T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
650 V, 50 A trench field-stop IGBT with full rated silicon diode

The NGW50T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
NGW50T65H3DFP
650 V, 50 A trench field-stop IGBT with full rated silicon diode

The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses,. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
650 V, 50 A trench field-stop IGBT with full rated silicon diode

The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses,. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
NGW40T65M3DFP
650 V, 40 A trench field-stop IGBT with full rated silicon diode

The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-?circuit withstand time of 5 μs. This hard?-?switching 650 V, 40 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
650 V, 40 A trench field-stop IGBT with full rated silicon diode

The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-?circuit withstand time of 5 μs. This hard?-?switching 650 V, 40 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
NGW40T65H3DHP
650 V, 40 A trench field-stop IGBT with half rated silicon diode

The NGW40T65H3DHP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65H3DHP is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 40 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
650 V, 40 A trench field-stop IGBT with half rated silicon diode

The NGW40T65H3DHP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65H3DHP is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 40 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
NSF080120L4A0
1200 V, 80 mOhm, N-channel SiC MOSFET

The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
1200 V, 80 mOhm, N-channel SiC MOSFET

The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF080120L3A0
1200 V, 80 mΩ, N-channel SiC MOSFET

The NSF080120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
1200 V, 80 mΩ, N-channel SiC MOSFET

The NSF080120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF080120D7A0
1200 V, 80 m?, N-channel SiC MOSFET

The NSF080120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
1200 V, 80 m?, N-channel SiC MOSFET

The NSF080120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF060120L4A0
1200 V, 60 mOhm, N-channel SiC MOSFET

The NSF060120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247-4 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
1200 V, 60 mOhm, N-channel SiC MOSFET

The NSF060120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247-4 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
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